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New pixel detector for HEP experiments

A novel approach to particle detection and track reconstruction for HEP  vertex experiments based on 3D IC pixel detectors has been developed. This approach is based on the superposition of several monolithic detectors including both sensing area and control/signal elaboration circuitry, integrated in a 3D stack by means of intra-silicon vertical connections.

Each layer consists in a fully functional sensor derived from already fabricated and tested 2D CMOS Active Pixel vertex detectors, manufactured using a commercial sub-micron CMOS VLSI technology...(read more)

Active Pixel Sensors (APS) for the detection of ionizing particles

A radiation sensor is a dispositive able to detect incoming ionizing particles and gives to the user information like the energy, the intensity or the position of the radiation. Among the different approaches to the radiation detection, one of the most studied in the last decades is the usage of semiconductor solid state detector thanks to the continuous evolution of the semiconductor industries. All this page is focused on the most common implementation of a radiation sensor in CMOS technologies the Active Pixel Sensor. (read more)

The Minority Carrier Lifetime in Silicon Wafer

The minority carrier “lifetime” (τ) is a measure of how long a carrier is likely to stay around for before recombining and is one of the most important parameters for the characterization of semiconductor wafers used in the preparation of power electronic devices and photovoltaic solar cells. Stating that "a silicon wafer has a long lifetime" usually means minority carriers generated in the bulk will persist for a long lifetime before recombining.... (read more)

The Energy Loss Distribution of charged particles for thin silicon layer

The statistical nature of the ionizing process during the passage of a fast charge particle through matter results in a large fluctuations of the energy loss (Δ) in absorber which are thin compared with the particle range... (read more)

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Cmos, Aps, Pixel Sensor, Cern,Silicon Lifetime, Energy Loss, Particle Detector, Carrier Diffusion, Spatial resolution, Silicon Wafer, Ionizing Particle, SLHC, GBLD, Landau Distribution, Solid State Detector