Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors
The IC
technology trend is to move from 3D
flexible configurations (package
on package, stacked dies) to
real 3D ICs. This is mainly due
to i) the increased electrical
performances and ii) the cost of
3D integration which may be
cheaper than to keep shrinking
2D circuits. Perspective
advantages for particle tracking
and vertex detectors
applications in High Energy
Physics can be envisaged: in
this work, we will focus on the
capabilities of the
state-of-the-art vertical scale
integration technologies,
allowing for the fabrication of
very compact, fully functional, multiple
layers CMOS Active Pixel Sensor
(APS) detectors.
The main
idea is to exploit the features
of the 3D
technologies for the fabrication
of a “stack” of very thin and
precisely aligned CMOS APS
layers, leading to a single,
integrated, multi-layers pixel
sensor. The adoption of
multiple-layers single detectors
can dramatically reduce the mass
of conventional, separated
detectors (thus reducing multiple
scattering issues),
at the same time allowing for
very precise measurements of
particle trajectory and
momentum.
As a proof
of concept, an extensive device
and circuit simulation activity
has been carried out, aiming at
evaluate the suitability of such
a kind of CMOS active pixel
layers for particle tracking
purposes.)
Cite as
D. Passeri, L. Servoli, S. Meroli “Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors” 2009 JINST 4 P04009
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