Beam test results for the RAPS03 non-epitaxial CMOS Active Pixel Sensor
Recently
our group has been investigating
the possibility of using a
standard CMOS technology –
featuring no epitaxial layer –
to fabricate a sensor for
charged particle detection. In
this work we present the results
obtained exposing sensors with
256x256 pixels ( pixel size, two
different pixel layouts) to 180 GeV protons and positrons at the
SuperProtoSynchrotron facility
(CERN). We have investigated the
different response of the two
architectural options in terms
of S/N, cluster width, intrinsic
spatial resolution, efficiency.
The results show a good
Landau response,
S/N about 22 with an average
cluster size of 4.5 pixels, and
an intrinsic spatial resolution
of (order of 1/7th of the pixel
size).
Cite as
D. Biagetti et al. Beam test
results for the RAPS03
non-epitaxial CMOS active pixel
sensor, Nucl. Instr and Metho A
628 (2011) 230–233
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