Energy loss measurement for charged particles in very thin silicon layers
Solid-state
silicon detectors are nowadays
widely used in particle physics
experiments, e.g. at CERN Large
Hadron Collider, as well as in
astro-particle experiments.
Fabrication technology advances
have enabled the construction of
very thin silicon detectors with
associated fast read-out
electronics. In the future, the
requirements for particle
tracking systems will be even
more stringent, in particular in
terms of low material budget and
read-out speed. The reduction of
the detector thickness decreases
the signal rise time, increases
the radiation resistance and
reduces the material budget and
the associated multiple
scattering effects. Therefore it
is important to investigate the
energy loss distribution f (Δ)
due to the passage of ionizing
particles through thin layers of
matter. To accomplish the f (Δ)
measurement, the charge
generated by ionizing particles
crossing a silicon layer of
known thickness is collected and
measured. To perform a
comprehensive study, a large
number of detectors, each one
with different thickness, is
needed. This procedure is
intrinsically cost and time
consuming and very difficult to
accomplish, especially for small
thicknesses.
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Fig .1 Energy
loss distribution for 12 GeV
protons passing through 5.6 mm
of silicon with convolved
function fit and Landau
contribution of this fit.
In
this paper a new method to
precisely measure the f (Δ) at
various silicon thicknesses
(ranging from 5.6 to 120 um) is
proposed, using only one CMOS
Active Pixel Sensor in a grazing
angle configuration.
Cite as
S. Meroli et al., Energy loss measurement for charged particles in very thin silicon layers , JINST, 6 P06013 doi: 10.1088/1748-0221/6/06/P06013
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